Teron™ 640e: Advancing EUV and 193nm Patterned Reticles in Mask Shops
The Teron™ 640e reticle inspection product line offered by KLA plays a pivotal role in advancing the development and qualification of cutting-edge EUV and 193nm patterned reticles in mask shops. These systems are designed to detect critical pattern and particle defects, ensuring the high quality and reliability of reticles used in semiconductor production. Through die-to-database or die-to-die inspection modes, the Teron 640e addresses the complex structures and stack materials prevalent in the latest 7nm and 5nm device nodes. The system incorporates advanced optics and image processing enhancements to meet stringent defect capture specifications and throughput demands, effectively accelerating reticle manufacturing cycle times while maintaining cleanliness standards required for EUV mask production.
Teron™ SL670e XP: Ensuring Yield Protection in IC Fab Applications
In IC fab applications, the Teron™ SL670e XP inspection system stands out as a crucial tool for assessing EUV reticle quality, periodic re-qualification, and defect monitoring during chip production. With innovative technologies like EUVGold™ and EUVMultiDie, as well as advanced focus tracking and imaging capabilities, the Teron SL670e XP offers the necessary sensitivity to detect yield-critical defects on EUV reticles utilized in 5nm/3nm logic and advanced DRAM chip manufacturing. Moreover, the system boasts industry-leading production throughput, supporting rapid cycle times essential for qualifying reticles in high-volume chip production environments. Additionally, the Teron SL670e XP provides an option to inspect advanced optical reticles, further enhancing its versatility and applicability in the IC fab setting.
TeraScan™ 597XRS: Comprehensive Solution for Reticle Defect Inspection
The TeraScan™ 597XRS system by KLA represents a comprehensive and cost-effective solution for reticle defect inspection, particularly catering to design rules of ≥32 nm. With its capability to detect classical defects such as intrusions, extrusions, and point defects, the TeraScan 597XRS can inspect various reticle types, including chrome-on-glass, sub-resolution OPC, embedded phase shift, and alternating phase shift, across 248 nm and 193 nm wavelengths. Leveraging deep ultraviolet (DUV) image acquisition and advanced inspection algorithms, TeraScan offers a low false defect rate and high-speed pattern inspection, making it ideal for precise pattern inspection in photomask manufacturing and quality control in wafer fabs pre- and post-pellicle.
X5.x™: Early Detection of Progressive Defects in IC Fab Settings
The X5.x™ reticle inspection systems from KLA are designed to capture defects and pattern degradation, enabling the early detection of progressive issues like haze that may surface unpredictably during mask production in the fab. By swiftly identifying reticle defects before they impact wafer printing, the X5.x systems play a crucial role in safeguarding overall yield by minimizing potential lithographic field and wafer printing errors. Moreover, the Total ReQual feature extends beyond defect detection to incorporate changes that can occur during a reticle's lifecycle in the fab, preserving device yield, performance, and reliability. Leading fabs rely on X5.x systems not only for defect detection but also for verifying reticle specs, benchmarking vendors, and ensuring quality control.
FlashScan® 211: Rapid Mask Blank Defect Inspection for Various Applications
For mask shops and blank manufacturers, the FlashScan® 211 mask blank defect inspection system provides essential support in meeting defect requirements for optical and EUV lithography applications. With its high sensitivity, rapid inspection speed, and automated defect dispositioning capabilities, the FlashScan 211 system streamlines the defect detection process, delivering prompt results for a wide range of applications. This system plays a critical role in ensuring the quality and reliability of mask blanks, ultimately contributing to improved semiconductor device yields and performance.